AO4606 30v complementary mosfet general description product summary n-channel p-channel v ds = 30v -30v i d = 6a (v gs =10v) -6.5a (v gs =-10v) r ds(on) r ds(on) < 30m (v gs =10v) < 28m (vgs=-10v) < 42m (v gs =4.5v) < 44m (vgs=-4.5v) 100% uis tested 100% uis tested 100% r g tested 100% r g tested the AO4606 uses advanced trench technology mosfets to provide excellent r ds(on) and low gate charge. the complementary mosfets may be used to form a level shifted high side switch, and for a ho st of other applications. soic-8 top view bottom view pin1 g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 86 7 top view g1 d1 s1 n - channel p - channel g2 d2 s2 symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl absolute maximum ratings t a =25c unless otherwise noted max n-channel max p-channel units parameter 2 1.3 drain-source voltage 30 5 t a =25c t a =70c p d pulsed drain current c continuous drain current 20 6 i d t a =25c avalanche energy l=0.1mh c 26 -30 v -6.5 c/w c v w -5.3 -30 mj max 30 10 5 2 units 23 aa 1.3 -55 to 150 gate-source voltage maximum junction-to-ambient a thermal characteristics 20 t a =70c avalanche current c maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 32 40 r q ja 48 62.5 74 90 junction and storage temperature range power dissipation b parameter typ rev 10: april 2012 www.aosmd.com page 1 of 9
AO4606 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.2 1.8 2.4 v i d(on) 30 a 25 30 t j =125c 40 48 33.5 42 m w g fs 15 s v sd 0.76 1 v i s 2.5 a c iss 200 255 310 pf c oss 30 45 60 pf c rss 20 35 50 pf r g 1.6 3.25 4.9 w q g (10v) 4 5.2 6 nc q g (4.5v) 2 2.55 3 nc q gs 0.85 nc q gd 1.3 nc t d(on) 4.5 ns t r 2.5 ns t d(off) 14.5 ns n-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage v gs =4.5v, i d =5a r ds(on) static drain-source on-resistance i dss v gs =0v, v ds =15v, f=1mhz switching parameters m a v ds =v gs i d =250 m a v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current gate resistance v gs =0v, v ds =0v, f=1mhz i d =250 m a, v gs =0v m w on state drain current i s =1a,v gs =0v v ds =5v, i d =6a forward transconductance diode forward voltage v gs =10v, v ds =5v v gs =10v, i d =6a reverse transfer capacitance total gate charge v gs =10v, v ds =15v, i d =6a gate source charge gate drain charge total gate charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =2.5 w , r gen =3 w t d(off) 14.5 ns t f 3.5 ns t rr 8.5 12 ns q rr 2.2 3 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =6a, di/dt=100a/ m s turn-off fall time body diode reverse recovery charge i f =6a, di/dt=100a/ m s turn-off delaytime r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 10: april 2012 www.aosmd.com page 2 of 9
AO4606 n-channel: typical electrical and thermal characteristics 17 52 10 0 18 0 3 6 9 12 15 1 1.5 2 2.5 3 3.5 4 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 20 25 30 35 40 45 0 3 6 9 12 15 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =8a v gs =4.5v i d =6a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 10v 3.5v 4v 4.5v 7v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 40 60 80 100 0 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =6a 25 c 125 c rev 10: april 2012 www.aosmd.com page 3 of 9
AO4606 n-channel: typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =6a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction- to - ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms to - ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90 c/w t on t p d rev 10: april 2012 www.aosmd.com page 4 of 9
AO4606 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev 10: april 2012 www.aosmd.com page 5 of 9
AO4606 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.3 -1.85 -2.4 v i d(on) -30 a 22 28 t j =125c 32 40 34 44 m w g fs 18 s v sd -0.8 -1 v i s -2.5 a c iss 760 pf c oss 140 pf c rss 95 pf r g 1.5 3.2 5 w q g (10v) 13.6 16 nc q g (4.5v) 6.7 8 nc q gs 2.5 nc q gd 3.2 nc t d(on) 8 ns t r 6 ns t d(off) 17 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =-15v, r l =2.3 w , r gen =3 w total gate charge v gs =10v, v ds =-15v, i d =-6.5a gate source charge gate drain charge total gate charge gate resistance v gs =0v, v ds =0v, f=1mhz forward transconductance i s =-1a,v gs =0v v ds =-5v, i d =-6.5a v gs =-4.5v, i d =-5a i dss m a v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance m w on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-6.5a diode forward voltage v ds =v gs i d =-250 m a reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz switching parameters p-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage t d(off) 17 ns t f 5 ns t rr 15 ns q rr 9.7 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =-6.5a, di/dt=100a/ m s turn-off delaytime r gen =3 w turn-off fall time i f =-6.5a, di/dt=100a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 10: april 2012 www.aosmd.com page 6 of 9
AO4606 p-channel: typical electrical and thermal characteristics 17 52 10 0 18 0 10 20 30 40 0 1 2 3 4 5 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 35 40 45 0 5 10 15 20 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-4.5v i d =-5a v gs =-10v i d =-6.5a 25 c 125 c v ds =-5v v gs =-4.5v v gs =-10v 0 10 20 30 40 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-3v -3.5v -10v -4.5v -5v -4v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 10 30 50 70 90 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-6.5a 25 c 125 c rev 10: april 2012 www.aosmd.com page 7 of 9
AO4606 p-channel: typical electrical and thermal characteristics 0 2 4 6 8 10 0 3 6 9 12 15 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-6.5a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction- to - ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms to - ambient (note f) operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90 c/w t on t p d rev 10: april 2012 www.aosmd.com page 8 of 9
AO4606 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i rev 10: april 2012 www.aosmd.com page 9 of 9
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